The US Army has awarded GE Aviation with a contract to develop silicon carbide-based power electronics that will allow high-voltage, next-generation ground vehicles to operate at higher temperatures.
“The US Army’s implementation of [this technology for] more electric ground vehicles, facilitates significant improvements in size, weight and power for high temperature applications,” said GE Aviation Electrical Power Systems president Vic Bonneau.
He added, “Successes to date have led to this new application that will enable the US Army to better manage on-board power and simplify the vehicle cooling architecture. Ultimately, this product will increase mission capability for the warfighter.”
Army-Technology.com reported that “the company will demonstrate the silicon carbide Mosfet technology combined with Gallium Nitride (GaN) devices in a 15kW, 28VDC / 600VDC bi-directional converter as part of an 18-month development programme.”
“The new technology is expected to provide twice the power in less than 50% of the volume of current silicon-based electronics,” confirms Army-Technology.com.
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