Opto Diode has introduced the second product in the super-high-power series of gallium aluminum arsenide (GaAlAs) infrared (IR) emitters, the OD-110W. Featuring a very uniform optical beam, the new device is designed especially for military imaging applications.
The OD-110W features four wire bonds on die corners and a hermetically-sealed, 3-lead, standard TO-39 package with all surfaces gold-plated for added durability. The total power output is typically 140 mW (minimum 80 mW), with peak emission wavelength at 850nm.
